KARAKTERISASI TEORITIS SEMIKONDUTOR SILICON NANOTUBE ARMCHAIR MENGGUNAKAN METODE DFT

  • RIESKA AMILIA

Abstract

Abstrak. Telah dilakukan kaji teoritis dalam menentukan celah energi dari silicon nanotube armchair. Penelitian ini menggunakan metode komputasi dengan Teori Fungsi Kerapatan (DFT) pada bassis set TZV2P (Triple Zeta Valence 2 Polarization). Silicon nanotube armchair (8,8-10,10) memiliki celah energi 2,745512eV, 2,402662eV, 2,323422eV. Bentuk silicon nanotube armchair lebih stabil. Silicon nanotube armchair stabil dikarenakan Orbital Pz mengalami tumpang tindih electron dengan sangat baik. Silicon nanotube armchair memiliki kecenderungan sifat semikonduktor tipe-p

Kata kunci : silicon nanotube, celah energy, semiconductor

 

Abstract. Theoretical studies have been conducted to determine the energy gap of armchair silicon nanotubes and zig-zag silicon nanotube. This study uses computational methods with Density Function Theory (DFT) on the bassist set TZV2P (Triple Zeta Valence 2 Polarization). Armchair silicon nanotubes (8.8 to 10.10) has the energy gap 2,745512eV, 2,402662eV, 2,323422eV, zig-zag silicon. Armchair silicon nanotubes is more stable. Armchair silicon nanotubes are stable because Pz orbitals has a good overlap. Silicon armchair nanotubes have a tendency p-type semiconductor

Key words : silicon nanotube, band gap, semiconductor

Published
2016-11-29
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